Theorical analysis of a monolithic all-active three-section semiconductor laser


  • Mohammed Mehdi Bouchene Laboratoire des Télécommunications Département Électronique et Télécommunications Faculté des Sciences et de la Technologie Université 8 Mai 1945 Guelma BP 401 GUELMA 24000 - ALGERIE
  • Rachid Hamdi
  • Qin Zou



We propose a novel semiconductor laser structure. It is composed of three cascaded active sections: a Fabry-Pérot laser section sandwiched between two gain-coupled distributed feedback (DFB) laser sections. We have modeled this multi-section structure. The simulation results show that compared with index- and gain-coupled DFB lasers, a significant reduction in the longitudinal spatial-hole burning can be obtained with the proposed device, and that this leads to a stable single longitudinal mode operation at relatively high optical power with a SMSR exceeding 56dB.

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How to Cite

M. M. Bouchene, R. Hamdi, and Q. Zou, “Theorical analysis of a monolithic all-active three-section semiconductor laser”, Photonics Lett. Pol., vol. 9, no. 4, pp. pp. 131–133, Dec. 2017.