Study of Morphology of Graphene using Atomic Force Microscopy and Raman Spectroscopy

Authors

  • Sabina Drewniak Department of Optoelectronics, Silesian University of Technology, 2A Akademicka St., 44-100 Gliwice, Poland
  • Tadeusz Pustelny Department of Optoelectronics, Silesian University of Technology, 2A Akademicka St., 44-100 Gliwice, Poland
  • Iwona Pasternak Institute of Electronic Materials Technology, 133 Wólczyńska St, 01-919
  • Aleksandra Krajewska Institute of Electronic Materials Technology, 133 Wólczyńska St, 01-919 Instiute of Optoelectronics, Military University of Technology, 2 Gen. S. Kaliskiego St, 00-908 Warsaw
  • Grzegorz Konieczny Department of Optoelectronics, Silesian University of Technology, 2A Akademicka St., 44-100 Gliwice, Poland

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v6i4.527

Abstract

This paper presents the analysis of graphene layer imposed on the resistance sensing structure. All the studies are directed to determine the quantity and quality of the graphene layer. We present the results of the experiments using atomic force microscopy, electron microscopy and Raman spectroscopy. The Raman spectra were subjected to detailed analyzes, especially a position and a half width of 2D peak.

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References
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Published

2014-12-31

How to Cite

[1]
S. Drewniak, T. Pustelny, I. Pasternak, A. Krajewska, and G. Konieczny, “Study of Morphology of Graphene using Atomic Force Microscopy and Raman Spectroscopy”, Photonics Lett. Pol., vol. 6, no. 4, pp. pp. 118–120, Dec. 2014.

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Articles