Enhancement of Minority Carrier Lifetime of Fe Contaminated Boron-Phosphorus Compensated p-Type SoG Silicon

Authors

  • Mohammad Ziaur Rahman Ahsanullah University of Science and Technology
  • Mohammad Jahangir Alam Bangladesh University of Engineering and Technology

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v5i2.384

Abstract

To understand the role of deliberate phosphorus doping on the minority carrier lifetime of iron contaminated boron-phosphorus-compensated p-type solar grade silicon, a numerical study has been performed. This study confirmed that compensation results in a significant increase in bulk lifetime of minority carrier. The gain in carrier lifetime is predicted due to the shift in Fermi energy level, carriers screening and reduction in net equilibrium hole concentration. The bulk lifetime of minority carrier reaches its maximum for phosphorus concentration around 1015cm-3 if the boron concentrations remain fixed at 1017cm-3.

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Author Biography

Mohammad Jahangir Alam, Bangladesh University of Engineering and Technology

Professor, Dept. of EEE, BUET

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Published

2013-06-30

How to Cite

[1]
M. Z. Rahman and M. J. Alam, “Enhancement of Minority Carrier Lifetime of Fe Contaminated Boron-Phosphorus Compensated p-Type SoG Silicon”, Photonics Lett. Pol., vol. 5, no. 2, pp. pp. 75–77, Jun. 2013.

Issue

Vol. 5 No. 2 (2013)

Section

Articles

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