Performance of a nitrogen implanted large aperture THz emitter


  • Krzysztof Tomasz Świtkowski Faculty of Physics, Warsaw University of Technology
  • Cezariusz Jastrzębski Faculty of Physics, Warsaw University of Technology
  • Norbert Pałka Institute of Optoelectronics, Military University of Technology
  • Jan Dyczewski Institute of Electron Technology
  • Adam Barcz



Improved bandwidth of a large aperture nitrogen implanted GaAs photoconductive THz emitter is presented in this paper. An effect of nitrogen ion implantation on semi-insulating GaAs has been studied in a sample implanted at two doses: 3×1014 and 6×1014 ions/cm2. The carrier life time of the investigated material was measured by means of the femtosecond time-resolved-reflectance technique. The implantation process reduced the carrier lifetime of GaAs by 65%.The bandwidth of the THz emitter was tested in a Time Domain Spectroscopy arrangement. Usable bandwidth of the TDS set-up based on the implanted emitter increased from 1 to 1.5THz.

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How to Cite

Świtkowski, K. T., Jastrzębski, C., Pałka, N., Dyczewski, J., & Barcz, A. (2012). Performance of a nitrogen implanted large aperture THz emitter. Photonics Letters of Poland, 4(1), pp. 32–34. lett. pl.v4i1.276