Graphene-Molybdenum Disulphide Chitin Nanocomposite Based Passive Q-switcher

Authors

  • Siti Nabilah Mohd Halim Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
  • Husni Hani Jameela Sapingi Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
  • Mohamad Fariz Mohamad Taib Faculty of Applied Science, Universiti Teknologi MARA, Shah Alam 40450 Selangor, Malaysia
  • Fauzan Ahmad Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.4302/plp.v14i1.1136

Keywords:

Graphene, Molybdenum Disulphide, Chitin

Abstract

A simple fabrication of graphene-MoS2 nanocomposite, as well as individual graphene and molybdenum disulphide (MoS2) film has been done through a liquid phase exfoliation method using chitin as a binder. All of the developed films are integrated as a passive Q-switcher in an Erbium doped fiber laser. The graphene-MoS2 nanocomposite based passive Q-switcher is generated by a pulsed fiber laser with the shortest width of 1.63 µs and the highest signal to noise ratio of 51.01 dB. The graphene-MoS2 nanocomposite films show a better saturable absorption response compared to an individual graphene-chitin and MoS2-chitin based passive Q-switcher.

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References
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Published

2022-03-31

How to Cite

[1]
S. N. Mohd Halim, H. H. J. Sapingi, M. F. Mohamad Taib, and F. Ahmad, “Graphene-Molybdenum Disulphide Chitin Nanocomposite Based Passive Q-switcher”, Photonics Lett. Pol., vol. 14, no. 1, pp. 7–9, Mar. 2022.

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